参数资料
型号: 2SK2922
元件分类: 小信号晶体管
英文描述: RF SMALL SIGNAL, FET
封装: UPAK-3
文件页数: 1/7页
文件大小: 33K
代理商: 2SK2922
2SK2922
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-675A (Z)
2nd. Edition
Mar. 2001
Features
High power output, High gain, High efficiency
PG = 8.0dB, Pout = 31dBm,
ηD = 57 %min. (f = 836.5MHz)
Compact package capable of surface mounting
Outline
1
2
3
4
UPAK
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
相关PDF资料
PDF描述
2SK2922 RF SMALL SIGNAL, FET
2SK2926(S) 0.11 ohm, POWER, FET
2SK2926L-E 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2927 0.15 ohm, POWER, FET, TO-220AB
2SK2927 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK2925L-E 制造商:Renesas Electronics Corporation 功能描述:
2SK2925-S(TR-E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2925STR-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape
2SK2926 制造商:Renesas Electronics Corporation 功能描述:
2SK2926L-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,15A,42m ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) DPAK(L)-(2)