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参数资料
| 型号： | 2SK2925(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.16 ohm, POWER, FET |
| 封装： | DPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 25K |
| 代理商： | 2SK2925(L) |
2SK2925(L), 2SK2925(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)*
1
40
A
Body to drain diode reverse drain current
I
DR
10
A
Avalanche current
I
AP*
3
10
A
Avalanche energy
E
AR*
3
8.5
mJ
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥ 50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2925(L) | 0.16 ohm, POWER, FET |
| 2SK2926S-E | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2926S | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2926L | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2926L | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2925L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2925-S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2925STR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape |
| 2SK2926 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2926L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,15A,42m ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) DPAK(L)-(2) |
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