参数资料
型号: 2SK2925(L)
元件分类: JFETs
英文描述: 0.16 ohm, POWER, FET
封装: DPAK-3
文件页数: 3/6页
文件大小: 25K
代理商: 2SK2925(L)
2SK2925(L), 2SK2925(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
10
A
V
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.5
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
0.060
0.080
I
D = 5A, VGS = 10V*
1
resistance
R
DS(on)
0.095
0.160
I
D = 5A, VGS = 4V*
1
Forward transfer admittance
|y
fs|
5
8
S
I
D = 5A, VDS = 10V*
1
Input capacitance
Ciss
350
pF
V
DS = 10V
Output capacitance
Coss
190
pF
V
GS = 0
Reverse transfer capacitance
Crss
70
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
I
D = 5A, VGS = 10V
Rise time
t
r
55
ns
R
L = 6
Turn-off delay time
t
d(off)
60
ns
Fall time
t
f
70
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 10A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
50
ns
I
F = 10A, VGS = 0
diF/ dt = 50A/s
Note:
1. Pulse test
相关PDF资料
PDF描述
2SK2926S-E 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2926S 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2926L 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2926L 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2926S-E 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
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