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参数资料
| 型号： | 2SK2926S-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 76K |
| 代理商： | 2SK2926S-E |
2SK2328
Rev.2.00 Sep 07, 2005 page 5 of 6
10
0.8
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
8
0.4
1.2
1.6
4
6
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
2
5, 10 V
VGS = 0, –5 V
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T.
Vout Monitor
RL
VDD
30 V
=
.
Waveforms
Vin
td (on)
10%
t r
10%
90%
Vout
10%
90%
t f
td (off)
10%
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 1.67
°C/W, Tc = 25°C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2926S | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2926L | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2926L | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2926S-E | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2926S | 15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2926STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2927-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,10A,55m ohm,TO220AB 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2928-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2929-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2930-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Box |
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