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参数资料
| 型号： | 2SK2931-E |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, TO-220AB, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 87K |
| 代理商： | 2SK2931-E |
2SK2931
Rev.5.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
40
32
24
16
8
–40
0
40
80
120
160
0
VGS = 4 V
10 V
5, 10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
25
°C
Tc = –25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
ID = 20 A
10 A
5 A
0.1
0.3
1
3
10
30
100
010
20
30
40
50
10000
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
40
80
120
160
200
0
0.1 0.2
1
2
10 20
100
ID = 45 A
VGS
VDS
VDD = 50 V
25 V
10 V
100
20
50
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
50
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 10 V
25 V
50 V
1000
200
500
100
20
10
50
0.5
5
50
VGS = 10 V, VDD = 30 V
PW = 10
s, duty < 1 %
tf
tr
td(on)
td(off)
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相关代理商/技术参数 |
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|---|---|
| 2SK2933-E | 制造商:Renesas Electronics 功能描述:60V 15A TO3 Cut Tape |
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| 2SK2937-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220FM Box Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,25A,26m ohm,TO220FM 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220FM Box |
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