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参数资料
| 型号： | 2SK2932-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 101K |
| 代理商： | 2SK2932-E |
2SK2932
Rev.4.00 Sep 07, 2005 page 5 of 7
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
0
VGS = 0, –5 V
10 V
5 V
20
16
12
8
4
IAP = 10 A
VDD = 25 V
duty < 0.1 %
Rg > 50
Pulse Test
10
8
6
4
2
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25
°C/W, Tc = 25°C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
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| 2SK2934-E | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| 2SK2935 | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2933-E | 制造商:Renesas Electronics 功能描述:60V 15A TO3 Cut Tape |
| 2SK2934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2935(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2936-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220CFM Tube |
| 2SK2937-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220FM Box Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,25A,26m ohm,TO220FM 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220FM Box |
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