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参数资料
| 型号： | 2SK2937-E |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-67, TO-220FM, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 121K |
| 代理商： | 2SK2937-E |
2SK2937
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
25
A
Drain peak current
ID(pulse)
Note1
100
A
Body-drain diode reverse drain current
IDR
25
A
Avalanche current
IAP
Note3
20
A
Avalanche energy
EAR
Note3
34
mJ
Channel dissipation
Pch
Note2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltege drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
0.026
0.034
ID = 15 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
0.045
0.070
ID = 15 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
11
17
—
S
ID = 15 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
740
—
pF
Output capacitance
Coss
—
380
—
pF
Reverse transfer capacitance
Crss
—
140
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
Rise time
tr
—
160
—
ns
Turn-off delay time
td(off)
—
100
—
ns
Fall time
tf
—
150
—
ns
ID = 15 A, VGS = 10 V,
RL = 2
Body–drain diode forward voltage
VDF
—
0.95
—
V
IF = 25A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
40
—
ns
IF = 25A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2938STL-E | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2938L-E | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939(S) | 0.05 ohm, POWER, FET |
| 2SK2939(L) | 0.05 ohm, POWER, FET |
| 2SK2939S-E | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2937-E-Q | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFETS FOR GENERAL SWITCHING |
| 2SK2938-L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2940S-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2941-ZJ-E1 | 制造商:NEC Electronics Corporation 功能描述:2SK2941-ZJ-E1 |
| 2SK2943 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 900V TO-220F 制造商:Allegro MicroSystems LLC 功能描述:MOS FET |
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