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参数资料
| 型号： | 2SK2938STL-E |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-83, LDPAK-3 |
| 文件页数： | 7/8页 |
| 文件大小： | 109K |
| 代理商： | 2SK2938STL-E |
Data Sheet D13098EJ3V0DS
7
2SK3059
PACKAGE DRAWING (Unit : mm)
Isolated TO-220AB (MP-45F)
1.Gate
2.Drain
3.Source
10.0±0.3
3.2±0.2
φ
15.0±0.3
3±0.1
12.0±0.2
13.5
MIN.
4±0.2
0.7±0.1
1.3±0.2
1.5±0.2
2.54 TYP.
123
2.5±0.1
0.65±0.1
4.5±0.2
2.7±0.2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
EQUIVALENT CIRCUIT
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2938L-E | 25 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939(S) | 0.05 ohm, POWER, FET |
| 2SK2939(L) | 0.05 ohm, POWER, FET |
| 2SK2939S-E | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939S | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2940S-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2941-ZJ-E1 | 制造商:NEC Electronics Corporation 功能描述:2SK2941-ZJ-E1 |
| 2SK2943 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 900V TO-220F 制造商:Allegro MicroSystems LLC 功能描述:MOS FET |
| 2SK2943 LF619 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk |
| 2SK2949(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 |
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