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参数资料
| 型号： | 2SK2939(S) |
| 元件分类： | JFETs |
| 英文描述： | 0.05 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 63K |
| 代理商： | 2SK2939(S) |
2SK2939(L),2SK2939(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60
——V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.5
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state
R
DS(on)
—
0.020
0.026
I
D = 15A, VGS = 10V
Note4
resistance
R
DS(on)
—
0.032
0.050
I
D = 15A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
1423—
S
I
D = 15A, VDS = 10V
Note4
Input capacitance
Ciss
—
1100
—
pF
V
DS = 10V
Output capacitance
Coss
—
540
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
200
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 15A, VGS = 10V
Rise time
t
r
—
180
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
175
—
ns
Fall time
t
f
—
195
—
ns
Body–drain diode forward voltage
V
DF
—
0.95
—
V
I
F = 35A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
40
—
ns
I
F = 35A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2939(L) | 0.05 ohm, POWER, FET |
| 2SK2939S-E | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939S | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939L | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2956 | 0.018 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2940S-E | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK2943 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 900V TO-220F 制造商:Allegro MicroSystems LLC 功能描述:MOS FET |
| 2SK2943 LF619 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk |
| 2SK2949(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 |
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