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参数资料
| 型号： | 2SK2962 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 384K |
| 代理商： | 2SK2962 |
2SK2962
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 0.5 A
—
0.65
0.95
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
—
0.5
0.7
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.5 A
0.6
1.2
—
S
Input capacitance
Ciss
—
140
—
Reverse transfer capacitance
Crss
—
20
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
45
—
pF
Rise time
tr
—
8
—
Turnon time
ton
—
13
—
Fall time
tf
—
45
—
Switching time
Turnoff time
toff
—
175
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
6.3
—
Gatesource charge
Qgs
—
4.3
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 1 A
—
2
—
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
1
A
Pulse drain reverse current
(Note 1)
IDRP
—
3
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
80
—
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V, dIDR / dt = 50 A / s
—
140
—
nC
Marking
100
K2962
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2962(F) | 制造商:Toshiba 功能描述:Nch 100V 1A 0.7@10V TO92MOD 制造商:Toshiba 功能描述:Nch 100V 1A 0.7@10V TO92MOD Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 1A 3-Pin TO-92 Mod |
| 2SK2962(F,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 1A TO-92 |
| 2SK2962(T6CANO,A,F | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-92MOD 封装/外壳:TO-226-3，TO-92-3 长体 标准包装:1 |
| 2SK2962(T6CANO,F,M | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-92MOD 封装/外壳:TO-226-3，TO-92-3 长体 标准包装:1 |
| 2SK2962(TE6,F,M) | 功能描述:MOSFET N-ch 100V 1A 0.7 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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