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参数资料
| 型号： | 2SK2978ZYTR-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, SC-62, UPAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 84K |
| 代理商： | 2SK2978ZYTR-E |
2SK2978
Rev.5.00 Sep. 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
2.5
A
Drain peak current
ID(pulse)
Note1
5
A
Body-drain diode reverse drain current
IDR
2.5
A
Channel dissipation
Pch
Note2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
20
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±10
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 20 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±8 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.09
0.12
ID = 1.5 A, VGS = 4 V
Note3
Static drain to source on state
resistance
RDS(on)
—
0.12
0.20
ID = 1.5 A, VGS = 2.5 V
Note3
Forward transfer admittance
|yfs|
3.0
5.0
—
S
ID = 1.5 A, VDS = 10 V
Note3
Input capacitance
Ciss
—
260
—
pF
Output capacitance
Coss
—
150
—
pF
Reverse transfer capacitance
Crss
—
75
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
15
—
ns
Rise time
tr
—
70
—
ns
Turn-off delay time
td(off)
—
55
—
ns
Fall time
tf
—
70
—
ns
VGS = 4 V, ID = 1.5 A,
RL = 6.67
Body–drain diode forward voltage
VDF
—
0.9
—
V
IF = 2.5 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
75
—
ns
IF = 2.5 A, VGS = 0
diF/ dt = 50 A/
s
Note:
3. Pulse test
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