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参数资料
| 型号： | 2SK2980 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | MPAK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 41K |
| 代理商： | 2SK2980 |
2SK2980
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 100A, VGS = 0
Gate to source breakdown
V
(BR)GSS
+12
—
V
I
G = +100 A, VDS = 0
voltage
–10
—
V
I
G = –100A, VDS = 0
Zero gate voltege drain
current
I
DSS
—
1.0
AV
DS = 30 V, VGS = 0
Gate to source leak current
I
GSS
——
±5.0
AV
GS = ±8V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
0.5
—
1.5
V
I
D = 10A, VDS = 5V
Static drain to source on state
resistance
R
DS(on)
—
0.2
0.28
I
D = 500 mA
V
GS = 4V
Note3
Static drain to source on state
resistance
R
DS(on)
—
0.3
0.5
I
D = 500 mA
V
GS = 2.5V
Note3
Forward transfer admittance
|y
fs|
1.2
2.0
—
S
I
D = 500 mA
V
DS = 10V
Note3
Input capacitance
Ciss
—
155
—
pF
V
DS = 10V
Output capacitance
Coss
—
75
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
35
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
12
—
ns
V
GS = 4V, ID = 500 mA
Rise time
t
r
—
30
—
ns
R
L = 20
Turn-off delay time
t
d(off)
—35—
ns
Fall time
t
f
—30—
ns
Note:
3. Pulse test
4. Marking is “ZZ– ”
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PDF描述 |
|---|---|
| 2SK2981-Z | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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| 2SK3021TP-FA | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2980ZZ-TL(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2985 | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220NIS |
| 2SK2986 | 制造商:Toshiba 功能描述:Nch 60V 55A TO220FL/SM Cut Tape |
| 2SK2989 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 50V 5A 3PIN L-STM - Bulk |
| 2SK2989(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 50V 5A 3-Pin TO-92 Mod |
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