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参数资料
| 型号： | 2SK2980ZZ-TL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, SC-59A, MPAK-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 107K |
| 代理商： | 2SK2980ZZ-TL-E |
2SK2980
Rev.4.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
+12
V
Gate to source voltage
VGSS
–10
V
Drain current
ID
1.0
A
Drain peak current
ID(pulse)
Note1
4
A
Channel dissipation
Pch
Note2
0.8
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
—
V
ID = 100
A, VGS = 0
+12
—
V
IG = +100
A, VDS = 0
Gate to source breakdown voltage
V(BR)GSS
–10
—
V
IG = –100
A, VDS = 0
Zero gate voltage drain current
IDSS
—
1.0
A
VDS = 30 V, VGS = 0
Gate to source leak current
IGSS
—
±5.0
A
VGS =
±8 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
ID = 10
A, VDS = 5 V
Static drain to source on state
resistance
RDS(on)
—
0.2
0.28
ID = 500 mA, VGS = 4 V
Note3
Static drain to source on state
resistance
RDS(on)
—
0.3
0.5
ID = 500 mA, VGS = 2.5 V
Note3
Forward transfer admittance
|yfs|
1.2
2.0
—
S
ID = 500 mA, VDS = 10 V
Note3
Input capacitance
Ciss
—
155
—
pF
Output capacitance
Coss
—
75
—
pF
Reverse transfer capacitance
Crss
—
35
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
12
—
ns
Rise time
tr
—
30
—
ns
Turn-off delay time
td(off)
—
35
—
ns
Fall time
tf
—
30
—
ns
VGS = 4 V, ID = 500 mA,
RL = 20
Note:
3. Pulse test
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