参数资料
型号: 2SK2981
元件分类: JFETs
英文描述: 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
文件页数: 7/10页
文件大小: 226K
代理商: 2SK2981
Data Sheet D12355EJ3V0DS
4
2SK2981
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1000
10
100
Single Pulse
Rth(ch-A) = 125 C/W
Rth(ch-C) = 6.25 C/W
TC = 25C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID- Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
VDS = 10 V
Pulsed
0.1
1
10
100
10
100
0.1
Tch =
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
05
20
10
15
Pulsed
60
40
ID = 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
40
1
60
10
100
Pulsed
0
10 V
20
VGS = 4 V
4.5 V
0.2
80
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
50
100
150
0
1.0
2.0
1.5
0.5
相关PDF资料
PDF描述
2SK2983-ZJ 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK2983-S 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK2983 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2983-ZJ 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK2983-S 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
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