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参数资料
| 型号： | 2SK2982 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, SMALL SIGNAL, FET, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 765K |
| 代理商： | 2SK2982 |
Data Sheet D12354EJ3V0DS
2
2SK2982
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 15 A
9.8
12.5
m
RDS(on)2
VGS = 4.5 V, ID = 15 A
13.2
16.5
m
RDS(on)3
VGS = 4.0 V, ID = 15 A
15.0
19.0
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 15 A
13
27
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
VDS = 10 V
2290
pF
Output Capacitance
Coss
VGS = 0 V
940
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
440
pF
Turn-on Delay Time
Td(on)
ID = 15 A
40
ns
Rise Time
tr
VGS(on) = 10 V
427
ns
Turn-off Delay Time
td(off)
VDD = 15 V
174
ns
Fall Time
Tf
RG = 10
226
ns
Total Gate Charge
QG
ID = 30 A
53
nC
Gate to Source Charge
QGS
VDD = 24 V
6.3
nC
Gate to Drain Charge
QGD
VGS = 10 V
16
nC
Body Diode forward Voltage
VF(S-D)
IF = 30 A, VGS = 0 V
0.8
V
Reverse Recovery Time
Trr
IF= 30A, VGS = 0 V
49
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/
s50
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS(on)
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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