参数资料
型号: 2SK2991(2-10S1B)
元件分类: JFETs
英文描述: 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: 2-10S1B, 3 PIN
文件页数: 1/6页
文件大小: 420K
代理商: 2SK2991(2-10S1B)
2SK2991
2002-06-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2991
DCDC Converter Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 1.35 (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 500 V)
Enhancementmode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.5
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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相关代理商/技术参数
参数描述
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