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参数资料
| 型号： | 2SK2993(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 465K |
| 代理商： | 2SK2993(2-10S1B) |
2SK2993
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
—
82
105
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
10
20
—
S
Input capacitance
Ciss
—
4000
—
Reverse transfer capacitance
Crss
—
300
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1000
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
35
—
Fall time
tf
—
30
—
Switching time
Turnoff time
toff
—
180
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
100
—
Gatesource charge
Qgs
—
70
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 20 A
—
30
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
20
A
Pulse drain reverse current
(Note 1)
IDRP
—
60
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
300
—
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
3.3
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2993
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2993-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2993TE24L | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 20A 3PIN TO-220FL/SM - Tape and Reel |
| 2SK2995 | 功能描述:MOSFET N-CH 250V 30A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2995(F) | 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N)IS 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3P |
| 2SK2996 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB:B1DEGR |
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