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参数资料
| 型号： | 2SK2998 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 375K |
| 代理商： | 2SK2998 |
2SK2998
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
ID = ±10 mA, VGS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 0.25 A
—
11.5
18
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.25 A
0.2
0.4
—
S
Input capacitance
Ciss
—
75
—
Reverse transfer capacitance
Crss
—
7
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
25
—
pF
Rise time
tr
—
11
—
Turnon time
ton
—
18
—
Fall time
tf
—
54
—
Switching time
Turnoff time
toff
—
95
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
3.8
—
Gatesource charge
Qgs
—
1.9
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 0.5 A
—
1.9
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
0.5
A
Pulse drain reverse current
(Note 1)
IDRP
—
1.5
A
Forward voltage (diode)
VDSF
IDR = 0.5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
190
—
ns
Reverse recovery charge
Qrr
IDR = 0.5 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
380
—
nC
Marking
K2998
Lot No.
Note 2
Part No.
(or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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PDF描述 |
|---|---|
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| 2SK3013 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3017 | 8.5 A, 900 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3019TL | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK301P | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2998(TE6,F,M) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2998(TPE6,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 500V 0.5A 3-Pin TO-92 Mod T/R Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 0.5A, 500V, TO92 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 500V 0.5A TO-92 Mod 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,500V/0.5A/18ohm,LSTM |
| 2SK2998(TPE6F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 0.5A 500V TO92 |
| 2SK30 | 制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (30V, 0.1A) |
| 2SK300 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:2SK300 |
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