参数资料
型号: 2SK302
元件分类: 小信号晶体管
英文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236
封装: 2-3F1C, 3 PIN
文件页数: 1/7页
文件大小: 206K
代理商: 2SK302
2SK302
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK302
FM Tuner, VHF RF Amplifier Applications
Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
Low noise figure: NF = 1.7dB (typ.)
High power gain: Gps = 28dB (typ.)
Recommend operation voltage: 5~15 V
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGS
±5
V
Drain current
ID
30
mA
Drain power dissipation
PD
150
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0 V, VGS = ±5 V
±50
nA
Drain-source voltage
VDSX
VGS = -4 V, ID = 100 mA
20
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0 V
1.5
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 100 mA
-2.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0 V, f = 1 kHz
10
mS
Input capacitance
Ciss
3.0
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
0.035
0.050
pF
Power gain
GPS
28
dB
Noise figure
NF
VDS = 10 V, VGS = 0 V,
f
= 100 MHz (Figure 1)
1.7
3.0
dB
Note: IDSS classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
Unit: mm
JEDEC
TO-236
JEITA
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
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