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参数资料
| 型号： | 2SK3070(L) |
| 文件页数： | 5/10页 |
| 文件大小： | 54K |
| 代理商： | 2SK3070(L) |
Datasheet Title
4
Main Characteristics
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
PW
=
10
ms
(1
shot)
3.5 V
3 V
50
V
= 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
V
= 10 V
Pulse Test
DS
Pulse Test
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3070(S) | |
| 2SK3082(L) | |
| 2SK3082(S) | |
| 2SK3075 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3225-AZ | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3070L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3070S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3072 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
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