参数资料
型号: 2SK3070(S)
文件页数: 6/10页
文件大小: 54K
代理商: 2SK3070(S)
Datasheet Title
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
V
= 10 V
GS
4 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
100
2
5
1
10
300
20
10
V
= 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I
= 50 A
D
10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25
°C
75
°C
25
°C
V
= 10 V
Pulse Test
DS
50
1000
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(
°C)
R
(m
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
相关PDF资料
PDF描述
2SK3082(L)
2SK3082(S)
2SK3075 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
2SK3225-AZ 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3659 65 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK3070STL-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3072 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
2SK3072-TB-E 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253
2SK3074 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
2SK3074(TE12L,F) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 30V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba 功能描述:Trans MOSFET N-CH 30V 1A 4-Pin (3+Tab) PW-Mini T/R 制造商:Toshiba America Electronic Components 功能描述:RF MOSFET N-Channel 30V 1A SOT89