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参数资料
| 型号： | 2SK3080 |
| 元件分类： | JFETs |
| 英文描述： | 0.05 ohm, POWER, FET, TO-220AB |
| 文件页数： | 2/9页 |
| 文件大小： | 47K |
| 代理商： | 2SK3080 |
2SK3080
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)
Note1
120
A
Body-drain diode reverse drain current
I
DR
30
A
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
—
2028m
I
D = 15A, VGS = 10V
Note3
Static drain to source on state
resistance
R
DS(on)
—
3550m
I
D = 15A, VGS = 4V
Note3
Forward transfer admittance
|y
fs|
1218—
S
I
D = 15A, VDS = 10V
Note3
Input capacitance
Ciss
—
750
—
pF
V
DS = 10V
Output capacitance
Coss
—
520
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
210
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
16
—
ns
V
GS = 10V, ID = 15A
Rise time
t
r
—
260
—
ns
R
L = 0.67
Turn-off delay time
t
d(off)
—85
—
ns
Fall time
t
f
—90
—
ns
Body–drain diode forward voltage
V
DF
—
1.0
—
V
I
F = 30A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
45
—
ns
I
F = 30A, VGS = 0
diF/ dt =50A/
s
Note:
3. Pulse test
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相关代理商/技术参数 |
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|---|---|
| 2SK3081 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3082L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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