参数资料
型号: 2SK3082L
元件分类: JFETs
英文描述: 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LDPAK-3
文件页数: 3/5页
文件大小: 78K
代理商: 2SK3082L
2SA1893
2004-07-07
3
C
ollect
or
c
urre
nt
I C
(
A
)
Collector-emitter voltage VCE (V)
IC – VCE
C
ollect
or
c
urre
nt
I C
(
A
)
Collector current IC (A)
hFE – IC
DC
cu
rr
ent
g
ai
n
h
FE
Collector current IC (A)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
Base-emitter voltage VBE (V)
IC – VBE
0.03
300
Common emitter
VCE = 2 V
10
30
50
100
1000
0.1
1
10
25
Tc = 100°C
3
0.3
0.01
500
Ta = 100°C
Common emitter
IC/IB = 40
3
0.05
0.1
0.3
0.5
1
25
0.03
25
0.03
0.1
1
10
3
0.3
0.01
0
Common emitter
Ta = 25°C
9
1
5
6
3
4
5
7
6
30
100
50
70
150
20
IB = 10 mA
0
200
2
1
2
3
4
7
8
Common emitter
VCE = 2 V
0
9
1
4
5
6
0.6
0.8
1.2
Tc = 100°C
25
1.4
1.0
0.2
0.4
0
2
3
7
8
25
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相关代理商/技术参数
参数描述
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2SK3082S 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3082STL-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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2SK3084(Q) 制造商:Toshiba America Electronic Components 功能描述: