参数资料
型号: 2SK3092TP-FA
元件分类: 小信号晶体管
英文描述: 3000 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 2/4页
文件大小: 31K
代理商: 2SK3092TP-FA
2SK3092
No.6788-2/4
PW=1
s
D.C.
≤0.5%
P.G
RGS
50
G
S
D
ID=1.5A
RL=133
VDD=200V
VOUT
2SK3092
VGS=15V
ID -- VGS
Drain
Current,
I
D
-
A
Gate-to-Source Voltage, VGS -- V
ID -- VDS
Drain
Current,
I
D
-
A
Drain-to-Source Voltage, VDS -- V
7
6
5
4
3
2
1
0
30
20
10
0
7V
8V
IT01967
IT01968
VDS=10V
10V
0
6
5
4
3
2
1
510
15
20
Tc=
-
-25
°C
25
°C
75
°C
15V
VGS=6V
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
400
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
3A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
12
A
Allowable Power Dissipation
PD
1.0
W
Tc=25
°C30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
400
V
Zero-Gate Voltage Drain Current
IDSS
VDS=320V, VGS=0
1.0
mA
Gate-to-Sourse Leakage Current
IGSS
VGS=±30V, VDS=0
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1.5A
0.7
1.4
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1.5A, VGS=15V
1.8
2.3
Input Capacitance
Ciss
VDS=20V, f=1MHz
360
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
90
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
45
pF
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=3A
10
nC
Turn-ON Delay Time
td(on)
See specified Test Circuit
10
ns
Rise Time
tr
See specified Test Circuit
10
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
28
ns
Fall Time
tf
See specified Test Circuit
17
ns
Diode Forward Voltage
VSD
IS=3A, VGS=0
0.85
1.2
V
Marking : K3092
Switching Time Test Circuit
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