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参数资料
| 型号： | 2SK3096 |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 400 V, 0.87 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 43K |
| 代理商： | 2SK3096 |
2SK3096
No.8625-2/3
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Total Gate Charge
Qg
VDS=200V, ID=7A, VGS=10V
27
nC
Turn-ON Delay Time
td(on)
See specified Test Circuit.
15
ns
Rise Time
tr
See specified Test Circuit.
20
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
60
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Diode Forward Voltage
VSD
IS=7A, VGS=0V
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7507-002
10.2
5.1
4.5
1.3
15.1
14.0
2.7
6.3
3.6
18.0
(5.6)
2.7
1.2
0.8
0.4
2.55
12 3
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
PW=1μs
P.G
RGS
50Ω
G
S
D
ID=3.5A
RL=57.1Ω
VDD=200V
VGS=15V
VOUT
2SK3096
D.C.≤0.5%
PD -- Tc
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
--
W
Drain-to-Source Voltage, VDS -- V
A S O
Drain
Current,
I
D
--
A
IT15419
IT15418
0
20
40
60
80
100
120
140
160
10
0
30
20
40
60
50
70
80
1.0
23
5 7
2
10
35 7
2
1.0
7
5
3
2
0.1
2
10
7
5
3
2
3
Operation in this
area is limited by RDS(on).
DC
operation
IDP=28A (PW≤10μs)
ID=7A
1ms
10m
s
100ms
10
μs
100
μs
100
35
2 3
5
77
5
Tc=25
°C
Single pulse
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相关代理商/技术参数 |
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|---|---|
| 2SK3097 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-220CI |
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| 2SK3098 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N CHANNEL MOS SILICON TRANSISTOR |
| 2SK3099 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 9A I(D) | TO-220CI |
| 2SK3099LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
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