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参数资料
| 型号： | 2SK3099LS |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220FI(LS), 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 31K |
| 代理商： | 2SK3099LS |
2SK3099LS
No.8628-1/3
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8628
N0806QB SY IM TC-00000315
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SK3099LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
400
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
9A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
36
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
92.6
mJ
Avalanche Current *2
IAV
9A
*1 VDD=50V, L=2mH, IAV=9A
*2 L
≤2mH, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
400
V
Zero-Gate Voltage Drain Current
IDSS
VDS=320V, VGS=0V
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS= ±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3.0
4.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=6A
2.9
5.8
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=6A, VGS=15V
0.43
0.55
Marking : K3099
Continued on next page.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK30A | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB:2SK30A |
| 2SK30A-GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 |
| 2SK30A-O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 |
| 2SK30A-R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 |
| 2SK30ATM | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
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