- 您现在的位置：买卖IC网 > PDF目录33494 > 2SK3107-A 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3107-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-75, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 50K |
| 代理商： | 2SK3107-A |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS FIELD EFFECT TRANSISTOR
2SK3107
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No.
D13802EJ2V0DS00 (2nd edition)
Date Published
August 1999 NS CP(K)
Printed in Japan
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 2SK3107 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK3107 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3107
SC-75(USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±0.1
A
Drain Current (pulse)
Note1
ID(pulse)
±0.4
A
Total Power Dissipation
Note2
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
1.6
±
0.1
0.8
±
0.1
G
0.2
+0.1
–0
0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: D1
Gate
Drain
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3107 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3109 | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3109-ZJ | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3109-AZ | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3109-S | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3107-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,30V,0.1A,8.0ohm,USM3 |
| 2SK3108 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3108-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 8A 400m@10V IsolatedTO220 Bulk |
| 2SK3109 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3109-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
发布紧急采购，3分钟左右您将得到回复。