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参数资料
| 型号： | 2SK3107 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | USM, SC-75, 3 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 238K |
| 代理商： | 2SK3107 |
Data Sheet D13802EJ4V0DS
4
2SK3107
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
0.01
0.001
0.0001
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
Ω
0
2
8
4
6
10
TA = 125C
75C
25C
VGS = 10 V
Pulsed
0
10
20
30
48
12
16
20
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
Ω
VGS - Gate to Source Voltage - V
ID = 1 mA
10 mA
100 mA
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
110
0.01
0.1
100
10
100
1
0.1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
VDS - Drain to Source Voltage - V
Ciss
Coss
Crss
f = 1 MHz
VGS = 0 V
0.01
0.1
1
ID - Drain Current - A
td
(on)
,tr,
td
(off)
,tf
-
Swwitchig
Time
-
ns
1000
SWITCHING CHARACTERISTICS
VDD = 3 V
VGS = 4V
RG = 10
Ω
100
10
td(off)
td(on)
tf
tr
0.0001
0.001
0.01
1
0.1
0.6
0.4
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF
-
Source
to
Drain
Current
-
A
VF(S-D) - Source to Drain Voltage - V
VGS = 0 V
Pulsed
<R>
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PDF描述 |
|---|---|
| 2SK3109-S | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3109-ZJ | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3109 | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3111-S | 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3107(T1-A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC75 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SK3107-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,30V,0.1A,8.0ohm,USM3 |
| 2SK3108 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3108-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 8A 400m@10V IsolatedTO220 Bulk |
| 2SK3109 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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