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参数资料
| 型号： | 2SK3113B-ZK-E1-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 196K |
| 代理商： | 2SK3113B-ZK-E1-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18061EJ3V0DS00 (3rd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 4.4
Ω MAX. (VGS = 10 V, ID = 1.0 A)
Low gate charge
QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
Gate voltage rating : ±30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK3113B-S15-AY
Note
Tube 70 p/tube
TO-251 (MP-3-a) typ. 0.39 g
2SK3113B(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK3113B-ZK-E1-AY
Note
2SK3113B-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±2.0
A
Drain Current (pulse)
Note1
ID(pulse)
±8.0
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation (TA = 25°C)
Note2
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note3
IAS
2.0
A
Single Avalanche Energy
Note3
EAS
2.7
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20
→ 0 V
(TO-251)
(TO-252)
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3113B-ZK-E2-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3113B-ZK-E1-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3113B-S15-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3113B(1)-S27-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3114B-S17-AY | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3113B-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3113-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO252 Bulk |
| 2SK3114 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3114-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 4A 2200m@10V IsolatedTO220 Bulk |
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