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参数资料
| 型号： | 2SK3116 |
| 元件分类： | JFETs |
| 英文描述： | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 70K |
| 代理商： | 2SK3116 |
1998
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 1.2
MAX. (VGS = 10 V, ID = 3.75 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.5
A
Drain Current (pulse)
Note1
ID(pulse)
±30
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
7.5
A
Single Avalanche Energy
Note2
EAS
37.5
mJ
Diode Recovery dv/dt
Note3
dv/dt
3.5
V/ns
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25
, VGS = 20 → 0 V
3. IF
≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/
s, TA = 25°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3116
TO-220AB
2SK3116-S
TO-262
2SK3116-ZJ
TO-263
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3116-ZJ | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3120 | 2 A, 30 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S2B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S1B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3134(S) | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V |
| 2SK3116-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) TO-263 |
| 2SK3116-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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