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参数资料
| 型号： | 2SK3153-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-67, TO-220FM, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 88K |
| 代理商： | 2SK3153-E |
2SK3153
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
120
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
15
A
Drain peak current
ID(pulse)
Note1
60
A
Body-drain diode reverse drain current
IDR
15
A
Avalanche current
IAP
Note3
15
A
Avalanche energy
EAR
Note3
19
mJ
Channel dissipation
Pch
Note2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
120
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG = ±100
A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 120 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
65
85
m
ID = 8 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
80
110
m
ID = 8 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
8.5
14
—
S
ID = 8 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
860
—
pF
Output capacitance
Coss
—
360
—
pF
Reverse transfer capacitance
Crss
—
195
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
15
—
ns
Rise time
tr
—
95
—
ns
Turn-off delay time
td(off)
—
200
—
ns
Fall time
tf
—
130
—
ns
ID = 8 A, VGS = 10 V,
RL = 3.75
Body–drain diode forward voltage
VDF
—
0.9
—
V
IF = 15 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
100
—
ns
IF = 15 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3153 | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3155 | 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3156-E | 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3158-E | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3159 | 0.042 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3154 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3155 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3155-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 15A 3-Pin(3+Tab) TO-220FM Box |
| 2SK3156 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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