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参数资料
| 型号： | 2SK3155 |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 48K |
| 代理商： | 2SK3155 |
2SK3155
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
150
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 150 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state R
DS(on)
—
0.10
0.13
I
D = 8 A, VGS = 10 V
Note4
resistance
R
DS(on)
—
0.12
0.15
I
D = 8 A, VGS = 4 V
Note4
Forward transfer admittance
|y
fs|
8.5
14
—
S
I
D = 8 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
850
—
pF
V
DS = 10 V
Output capacitance
Coss
—
300
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
160
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
13
—
ns
I
D = 8 A, VGS = 10 V
Rise time
t
r
—
100
—
ns
R
L = 3.75
Turn-off delay time
t
d(off)
—
195
—
ns
Fall time
t
f
—
110
—
ns
Body–drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 15 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
140
—
ns
I
F = 15 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3156-E | 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3158-E | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3159 | 0.042 ohm, POWER, FET |
| 2SK3159 | 50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK315G | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3155-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 15A 3-Pin(3+Tab) TO-220FM Box |
| 2SK3156 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3156-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3157 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3157-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 20A 3-Pin(3+Tab) TO-220FM Box |
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