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参数资料
| 型号： | 2SK3156-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 88K |
| 代理商： | 2SK3156-E |
2SK3156
Rev.3.01 Apr 27, 2006 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
80
60
40
20
0
50
100
150
200
100
20
2
10
0.1
0.3
1
3
10
300
100
20
16
12
8
4
0
2
468
10
20
16
12
8
4
0
12
34
5
0.2
0.1
1
2 V
VGS = 2.5 V
Pulse Test
5 V
25
°C
VDS = 10 V
Pulse Test
75
°C
500
0.5
5
50
0.05
30
1000
10
s
1 ms
100
s
DC
Operation
(Tc
=
25
°C)
Ta = 25
°C
Operation in
this area is
limited by RDS(on)
PW
=
10
ms(1shot)
4 V
10 V
Tc = –25
°C
3 V
2.0
1.6
1.2
0.8
0.4
0
48
12
16
20
50
100
1
20
2
1000
200
500
100
20
10
50
Pulse Test
10 A
ID = 20 A
5 A
5
10
VGS = 4 V
10 V
Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3157 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3157-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 20A 3-Pin(3+Tab) TO-220FM Box |
| 2SK3158 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3158-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3159 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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