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参数资料
| 型号： | 2SK3177-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-67, TO-220FM, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 102K |
| 代理商： | 2SK3177-E |
2SK3177
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
15
A
Drain peak current
ID(pulse)
Note1
60
A
Body-drain diode reverse drain current
IDR
15
A
Avalanche current
IAP
Note3
15
A
Avalanche energy
EAR
Note3
15
mJ
Channel dissipation
Pch
Note2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
200
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
90
115
m
ID = 8 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
95
125
m
ID = 8 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
16
20
—
S
ID = 8 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
1600
—
pF
Output capacitance
Coss
—
510
—
pF
Reverse transfer capacitance
Crss
—
250
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
20
—
ns
Rise time
tr
—
120
—
ns
Turn-off delay time
td(off)
—
400
—
ns
Fall time
tf
—
170
—
ns
ID = 8 A, VGS = 10 V,
RL = 3.75
Body–drain diode forward voltage
VDF
—
0.85
—
V
IF = 15 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
100
—
ns
IF = 15 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
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|---|---|
| 2SK3177 | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3178 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3179 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK318 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR |
| 2SK319 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3192 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-channel power MOSFET |
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