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参数资料
| 型号： | 2SK3203(S) |
| 元件分类： | JFETs |
| 英文描述： | 0.028 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 59K |
| 代理商： | 2SK3203(S) |
2SK3203(L), 2SK3203(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
T y p
M a x
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20V, VDS = 0
Zero gate voltege drain current I
DSS
——
10
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.5
—
3.0
V
I
D = 1mA, VDS = 10V*
1
Static drain to source on state
R
DS(on)
—1114m
I
D = 20A, VGS = 10V*
1
resistance
—
18
28
m
I
D = 20A, VGS = 5V*
1
Forward transfer admittance
|y
fs|13
22
—
S
I
D = 20A, VDS = 10V*
1
Input capacitance
Ciss
—
1200
—
pF
V
DS = 10V
Output capacitance
Coss
—
380
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
200
—
pF
f = 1MHz
Total gate charge
Qg
—
23
—
nc
V
DD = 10V
Gate to source charge
Qgs
—
4.0
—
nc
V
GS = 10V
Gate to drain charge
Qgd
—
7.0
—
nc
I
D = 45A
Turn-on delay time
t
d(on)
—17—
ns
V
GS = 10V, ID = 20A
Rise time
t
r
—
300
—
ns
R
L = 0.5
Turn-off delay time
t
d(off)
—85—
ns
Fall time
t
f
—65—
ns
Body–drain diode forward
voltage
V
DF
—
1.15
—
V
I
F = 45A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—60—
ns
I
F =45A, VGS = 0
diF/ dt =20A/
s
Note:
1. Pulse test
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PDF描述 |
|---|---|
| 2SK3203(S) | 0.028 ohm, POWER, FET |
| 2SK3204 | 15 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3204 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3205 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications DC−DC Converter, and Motor Drive Applications |
| 2SK3205(Q) | 制造商:Toshiba 功能描述:Cut Tape 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 5A 3-Pin(3+Tab) PW-Mold |
| 2SK3205(T6L1HITJNQ | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3205(T6L1HIUO,N | 制造商:Toshiba America Electronic Components 功能描述: |
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