参数资料
型号: 2SK3204
元件分类: JFETs
英文描述: 15 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-10, 3 PIN
文件页数: 3/8页
文件大小: 194K
代理商: 2SK3204
1998, 2001
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13796EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP (K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance :
RDS(on)1 = 34 m
MAX. (VGS = 10 V, ID = 8 A)
RDS(on)2 = 50 m
MAX. (VGS = 4 V, ID = 8 A)
Low Ciss : Ciss = 940 pF TYP.
Built-in gate protection diode.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20,
10
V
Drain Current (DC) (TC = 25 °C)
ID(DC)
±15
A
Drain Current (pulse)
Note1
ID(pulse)
±45
A
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
15
A
Single Avalanche Energy
Note2
EAS
22.5
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3204
MP-10
5
相关PDF资料
PDF描述
2SK3205(2-7B3B) 5 A, 150 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3209 25 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3209 25 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3209 0.063 ohm, POWER, FET
2SK3210(L) 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
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