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参数资料
| 型号： | 2SK3205(2-7B3B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 150 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7B3B, SC-64, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 196K |
| 代理商： | 2SK3205(2-7B3B) |
2SK3205
2006-11-20
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 150 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
150
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
RDS (ON)
VGS = 4 V, ID = 2.5 A
—
0.54
0.75
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.36
0.5
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
—
S
Input capacitance
Ciss
—
330
—
Reverse transfer capacitance
Crss
—
50
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
145
—
pF
Rise time
tr
—
10
—
Turnon time
ton
—
15
—
Fall time
tf
—
10
—
Switching time
Turnoff time
toff
—
60
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
12
—
Gatesource charge
Qgs
—
8
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 120 V, VGS = 10 V, ID = 5 A
—
4
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
110
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs
—
0.47
—
nC
Marking
K3205
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相关代理商/技术参数 |
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| 2SK3207 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3209-E | 制造商:Renesas Electronics Corporation 功能描述: |
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