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参数资料
| 型号： | 2SK3209 |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 43K |
| 代理商： | 2SK3209 |
2SK3209
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
150
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
25
A
Drain peak current
I
D(pulse)*
1
100
A
Body-drain diode reverse drain current
I
DR
25
A
Avalanche current
I
AP*
3
25
A
Avalanche energy
E
AR*
3
46
mJ
Channel dissipation
Pch*
2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3209 | 0.063 ohm, POWER, FET |
| 2SK3210(L) | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3210L | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3210STL | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3214 | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3209-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK321 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:SI N-CHANNEL JUNCTION |
| 2SK3210 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3210L | 制造商:Renesas Electronics Corporation 功能描述: |
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