参数资料
型号: 2SK3210(S)
元件分类: JFETs
英文描述: 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LDPAK-3
文件页数: 1/7页
文件大小: 35K
代理商: 2SK3210(S)
2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-760A (Z)
Target Specification 2nd. Edition
Mar. 2001
Features
Low on-resistance
R
DS = 40m typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相关PDF资料
PDF描述
2SK3210(L) 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3210L-E 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3212 0.17 ohm, POWER, FET
2SK3214-E 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3214 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK3210S-E 制造商:Renesas Electronics Corporation 功能描述:
2SK3210STL 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3211 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3211(L) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262VAR