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参数资料
| 型号： | 2SK3214 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 25K |
| 代理商： | 2SK3214 |
2SK3214
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—
130
170
m
I
D = 5A, VGS = 10V*
4
resistance
R
DS(on)
—
150
190
m
I
D = 5A, VGS = 4V*
4
Forward transfer admittance
|y
fs|
8
13
—
S
I
D = 5A, VDS = 10V*
4
Input capacitance
Ciss
—
1100
—
pF
V
DS = 10V
Output capacitance
Coss
—
280
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
130
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 5A, VGS = 10V
Rise time
t
r
—
75
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—
300
—
ns
Fall time
t
f
—
150
—
ns
Body–drain diode forward
voltage
V
DF
—
0.85
—
V
I
F = 10A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = 10A, VGS = 0
diF/ dt = 50A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3217-01MR | 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK322-P | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322-S | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322-R | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322-T | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3215 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK321601 | 制造商:FUJI 功能描述:New |
| 2SK3216-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3216-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3217-01MR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:STD MOSFET |
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