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参数资料
| 型号： | 2SK3224 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | MP-3, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3224 |
Data Sheet D13797EJ2V0DS
7
2SK3224
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
13
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.2
7.0
MAX.
13.7
MIN.
2.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-0.1
+0.2
0.5-0.1
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
12
3
4
6.5±0.2
5.0±0.2
4.3
MAX.
0.8
2.3 2.3
0.9
MAX.
5.5±0.2
10.0
MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.3±0.2
0.5±0.1
0.8
MAX.
0.8
1.0
MIN.
1.8
TYP.
0.7
1.1±0.2
EQUIVALENT CIRCUIT
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3224-Z-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 2SK3225 | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3229-E | 60 A, 80 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3229 | 0.012 ohm, POWER, FET |
| 2SK322WR | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3224-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3225 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3225-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3225-Z(AZ) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SK3228 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 80V 75A 3PIN TO-220AB - Rail/Tube |
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