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参数资料
| 型号： | 2SK3229-E |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 80 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 65K |
| 代理商： | 2SK3229-E |
2SK3229
Rev.2.00 Sep 07, 2005 page 2 of 3
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
80
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
60
A
Drain peak current
ID (pulse)
Note 1
240
A
Body-drain diode reverse drain current
IDR
60
A
Avalanche current
IAP
Note 3
50
A
Avalanche energy
EAR
Note 3
181
mJ
Channel dissipation
Pch
Note 2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch
≤ 25°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
80
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
±0.1
A
VGS =
±20 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 80 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS (on)
—
6.0
7.5
m
ID = 30 A, VGS = 10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
8.0
12
m
ID = 30 A, VGS = 4 V
Note 4
Forward transfer admittance
|yfs|
50
85
—
S
ID = 30 A, VDS = 10 V
Note 4
Input capacitance
Ciss
—
9700
—
pF
Output capacitance
Coss
—
1250
—
pF
Reverse transfer capacitance
Crss
—
290
—
pF
ID = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
150
—
nC
Gate to source charge
Qgs
—
30
—
nC
Gate to drain charge
Qgd
—
30
—
nC
VDD = 25 V
VGS = 25 V
ID = 60 A
Turn-on delay time
td (on)
—
80
—
ns
Rise time
tr
—
280
—
ns
Turn-off delay time
td (off)
—
780
—
ns
Fall time
tf
—
340
—
ns
ID = 30 A
VGS = 10 V
RL = 1
Body-drain diode forward voltage
VDF
—
1.0
—
V
IF = 60 A, VGS = 0
Body-drain diode reverse recovery time
trr
—
80
—
ns
IF = 60 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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|---|---|
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