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参数资料
| 型号： | 2SK3229 |
| 元件分类： | JFETs |
| 英文描述： | 0.012 ohm, POWER, FET |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 26K |
| 代理商： | 2SK3229 |
2SK3229
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
80
——V
I
D = 10mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V*
1
Static drain to source on state R
DS(on)
—
6.0
7.5
m
I
D = 30A, VGS = 10V*
1
resistance
—
8.0
12
m
I
D = 30A, VGS = 4V*
1
Forward transfer admittance
|y
fs|50
85
—
S
I
D = 30A, VDS = 10V*
1
Input capacitance
Ciss
—
9700
—
pF
V
DS = 10V
Output capacitance
Coss
—
1250
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
290
—
pF
f = 1MHz
Total gate charge
Qg
—
150
—
nc
V
DD = 25V
Gate to source charge
Qgs
—
30
—
nc
V
GS = 25V
Gate to drain charge
Qgd
—
30
—
nc
I
D = 60A
Turn-on delay time
t
d(on)
—
80
—
ns
V
GS = 10V, ID = 30A
Rise time
t
r
—
280
—
ns
R
L = 1
Turn-off delay time
t
d(off)
—
780
—
ns
Fall time
t
f
—
340
—
ns
Body–drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 60A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
80
—
ns
I
F = 60A, VGS = 0
diF/ dt = 50A/
s
Note:
1. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3229(E) | 制造商:Renesas 功能描述:Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220CFM Magazine |
| 2SK3229-E | 制造商:Renesas 功能描述:Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220CFM Magazine |
| 2SK323 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK3230 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 2SK3230B | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
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