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参数资料
| 型号： | 2SK322WR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | MPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 29K |
| 代理商： | 2SK322WR |
2SK322
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
–15
V
Gate to source voltage
V
GSO
–15
V
Drain current
I
D
50
mA
Gate current
I
G
5mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
–15
—
V
I
G = –100 A
Gate to source breakdown
voltage
V
(BR)GSO
–15
—
V
I
G = –100 A
Gate cutoff current
I
GSS
—
–10
nA
V
GS = –7 V, VDS = 0
Drain current
I
DSS*
1
5
—
50
mA
V
DS = 5 V, VGS = 0 (pulse)
Gate to source cutoff voltage
V
GS(off)
—
–3.0
V
DS = 5 V, ID = 100 A
Forward transfer admittance
|y
fs|
25
45
—
mS
V
DS = 5 V, VGS = 0, f = 1 kHz
Note:
1. The 2SK322 is grouped by I
DSS as follows.
Grade
P
Q
R
S
T
Mark
WP
WQ
WR
WS
WT
I
DSS
5 to 16
14 to 24
20 to 32
28 to 42
36 to 50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK322WQ | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322WT | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322WS | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322WP | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322WP | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK323 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK3230 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 2SK3230B | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 2SK3230C | 制造商:NEC 制造商全称:NEC 功能描述:JUNCTION FIELD EFFECT TRANSISTOR |
| 2SK3233 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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