参数资料
型号: 2SK3230C
元件分类: 小信号晶体管
英文描述: 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: TUSM, SC-89, 3 PIN
文件页数: 3/5页
文件大小: 127K
代理商: 2SK3230C
Data Sheet D18894EJ1V0DS
3
2SK3230C
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT
-
Derating
Fa
ctor
-
%
0
20
40
60
80
100
120
0
255075
100
125
150
175
TA - Ambient Temperature - °C
I
D
-
Drai
nCur
rent
-
μ
A
0
200
400
600
800
1000
024
6
8
10
0 V
0.2 V
0.3 V
0.1 V
VGS = 0.2 V
0.1 V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
-
Gate
to
So
u
rce
Curr
ent
-
μ
A
0
10
20
30
40
10
20
30
40
0.2 0.4 0.6 0.8
0.2
0.4
0.6
0.8
VGS - Gate to Source Voltage - V
I
D
-
Drain
Current
-
μ
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
VDS = 2.0 V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
is
s
-Input
Capa
ci
tan
ce
-
pF
1
10
110
100
VGS = 0 V
f = 1.0 MHz
VDS - Drain to Source Voltage - V
|y
fs
|-
F
or
w
ar
d
T
ransfer
A
dmittan
ce
-
mS
V
GS(
off
)-
Gate
Cut
-off
Voltage
-
V
0.1
1
10
100
1000
| yfs |
VGS(off)
VDS = 2.0 V
IDSS - Zero Gate Voltage Drain Current -
μA
相关PDF资料
PDF描述
2SK3233-E 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3234-E 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3239STL-E 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3239L-E 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3245 8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK3233 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3233(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK3234 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:2SK3234
2SK3234(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK3235 制造商:未知厂家 制造商全称:未知厂家 功能描述: