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参数资料
| 型号： | 2SK3230J2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | TUSM, SC-89, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 45K |
| 代理商： | 2SK3230J2 |
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2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No.
D15942EJ1V0DS00 (1st edition)
Date Published
January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3230 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
1000
S TYP. (IDSS = 100 A)
1600
S TYP. (IDSS = 200 A)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3230
SC-89 (TUSM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Note1
VDSX
20
V
Gate to Drain Voltage
VGDO
–20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
Note2
PT
200
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
–55 to +125
°C
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1.6
±
0.1
0.5
±
0.05
0.8
±
0.1
D
1.0
1.6 ± 0.1
G
S
0.1
+0.1
–0.05
0.2
+0.1
–0
EQUIVALENT CIRCUIT
Source
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3230J3 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3233 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3274L-E | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3274S | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3289 | 300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3233 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3233(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3234 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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