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参数资料
| 型号： | 2SK3265 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 700 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 428K |
| 代理商： | 2SK3265 |
2SK3265
2005-07-04
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 700 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
700
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
—
0.72
1.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
4.0
7.0
—
S
Input capacitance
Ciss
—
1700
—
Reverse transfer capacitance
Crss
—
40
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
200
—
pF
Rise time
tr
—
40
—
Turnon time
ton
—
72
—
Fall time
tf
—
42
—
Switching time
Turnoff time
toff
—
145
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
53
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
—
28
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
10
A
Pulse drain reverse current
(Note 1)
IDRP
—
30
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
—
1.9
V
Reverse recovery time
trr
—
1400
—
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / s
—
17.5
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3265
Part No. (or abbreviation code)
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PDF描述 |
|---|---|
| 2SK3272-01L | 80 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK3274(L) | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3265(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,700/10A/1.0ohm,TO-220NIS |
| 2SK3265(F,T) | 功能描述:MOSFET MOSFET N-Ch, 700V, 10A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3265_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulators DC−DC Converter and Motor Drive Applications |
| 2SK3265_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulators DC−DC Converter and Motor Drive Applications |
| 2SK3268 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-channel power MOSFET |
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