- 您现在的位置：买卖IC网 > PDF目录33496 > 2SK3274(L) 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3274(L) |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 57K |
| 代理商： | 2SK3274(L) |
2SK3274(L), 2SK3274(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unijt
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltage drain current
I
DSS
——
10
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.5
—
3.0
V
DS = 10 V, ID = 1 mA*
1
Forward transfer admittance
|y
fs|18
30
—
S
I
D = 15 A, VDS = 10 V*
1
Static drain to source on state
R
DS(on)
—
1013m
I
D = 15 A, VGS = 10 V*
1
resistance
R
DS(on)
—
2030m
I
D = 15 A, VGS = 4.5 V*
1
Input capacitance
Ciss
—
1500
—
pF
V
DS = 10 V
Output capacitance
Coss
—
500
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
250
—
pF
f = 1 MHz
Total gate charge
Qg
—
27
—
nc
V
DD = 10 V
Gate to source charge
Qgs
—
6
—
nc
V
GS = 10 V
Gate to drain charge
Qgd
—
5
—
nc
I
D = 30 A
Turn-on delay time
td(on)
—
22
—
ns
V
GS = 10 V
Rise time
tr
—
170
—
ns
I
D = 15 A
Turn-off delay time
td(off)
—
110
—
ns
R
L = 2
Fall time
tf
—
145
—
ns
Body-drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 30 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
35
—
ns
I
F = 30 A, VGS = 0
diF/dt = 50 A/
s
Note:
1. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3274(S) | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3274(S) | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3278TP | 15000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3280TP-FA | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3283TP | 15000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3274S | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Slilicon N Channel MOS FET High Speed Power Switching |
| 2SK3277 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス － パワーMOS FET |
| 2SK327700L | 功能描述:MOSFET N-CH 200V 2.5A UG-1 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3278 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:DC/DC Converter Applications |
| 2SK3279 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:DC / DC ?R???o?[?^?p |
发布紧急采购，3分钟左右您将得到回复。