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参数资料
| 型号： | 2SK3284 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ZP, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 38K |
| 代理商： | 2SK3284 |
2SK3284
No. A0168-1/4
Features
Low ON-resistance.
Low Qg.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
400
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
10
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
40
A
Allowable Power Dissipation
PD
Tc=25
°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
400
V
Zero-Gate Voltage Drain Current
IDSS
VDS=320V, VGS=0V
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=6A
2.9
5.8
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=6A, VGS=15V
0.43
0.55
Input Capacitance
Ciss
VDS=20V, f=1MHz
1150
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
350
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
150
pF
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=10A
40
nC
Turn-ON Delay Time
td(on)
See specified Test Circuit.
17
ns
Rise Time
tr
See specified Test Circuit.
30
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
150
ns
Fall Time
tf
See specified Test Circuit.
50
ns
Diode Forward Voltage
VSD
IS=10A, VGS=0V
1.2
V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0168
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
80906 / 11006QB MS IM TB-00002033
SANYO Semiconductors
DATA SHEET
2SK3284
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3285 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:DC/DC Converter Applications |
| 2SK3285SMP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-262VAR |
| 2SK3285SMP-FA | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB |
| 2SK3285-TL-E | 制造商:SANYO 功能描述:Nch 30V 40A 0.023 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH30V40ASOT404 制造商:Sanyo 功能描述:0 |
| 2SK3287 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
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