参数资料
型号: 2SK3287
元件分类: 小信号晶体管
英文描述: SMALL SIGNAL, FET
封装: MPAK-3
文件页数: 4/8页
文件大小: 40K
代理商: 2SK3287
2SK3287
4
1.0
0.8
0.6
0.4
0.2
0
24
6
810
5
4
3
2
1
–40
0
40
80
120
160
0
I
= 300mA
D
150m A
Pulse Test
I
= 150m A
D
V
= 4 V
GS
10 V
0.1
0.2
0.5
1.0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
0.1
0.5
0.2
50
20
10
2
5
1.0
0.5
1.0
V
= 4V
GS
10 V
Pulse Test
Drain Current
I
(A)
D
Static
Drain
to
Source
on
State
Resistance
(
)
DS(on)
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature
Tc
(
°C)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
(A)
D
Forwaed Transfer Admittance
vs. Drain Current
|yfs|
(S)
Forward
Transfer
Admittance
50m A
50mA
50mA,150mA, 300m A
5
2
1.0
0.2
0.5
0.1
0.05
V
= 10 V
Pulse Test
DS
Tc = –25
°C
25
°C
75
°C
R
Static
Drain
to
Source
on
State
Resistance
(
)
DS(on)
R
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PDF描述
2SK3288 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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相关代理商/技术参数
参数描述
2SK3287AN(TL) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK3288 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3288ENTL 功能描述:MOSFET N-CH 30V .1A MPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3289 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3289AN(TL-E) 制造商:Renesas Electronics 功能描述:Cut Tape